sot-89-3l 1. base 2. collector 3. emitter transistor (npn) features z small flat package z large current capacity maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 120 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =120v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =5v, i c =100ma 80 240 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v base-emitter voltage v be v ce =5v, i c =500ma 1 v transition frequency f t v ce =5v,i c =500ma 120 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe rank o y range 80 C 160 120 C 240 marking co cy symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current 800 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2SC4373 1 www.htsemi.com semiconductor jinyu
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